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| NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES * * * * HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.050.1 1.250.1 3 2.00.1 R54 1.25 0.650.65 0.650.65 DESCRIPTION NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. NEC's NE677M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (leads 1, 3 and ,4) 0.590.05 +0.11-0.05 MAX 100 100 75 dBm dB dBm dB % dB GHz pF 10.0 120 15.0 15.5 16.0 13.5 50 1.7 15 0.22 0.50 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE677M04 M04 2SC5751 UNITS nA nA MIN TYP +0.01 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 20 mA Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = 1 dBm Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz DC IEBO hFE P1dB GL RF MAG |S21E|2 c NF fT Cre Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan |S21| 4. MAG = |S12| (K K 2- 1 ). California Eastern Laboratories 4 1.30 NE677M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9.0 6.0 2.0 50 205 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE677M04-T2 QUANTITY 3k pcs./reel THERMAL RESISTANCE SYMBOLS Rth j-a PARAMETERS Thermal Resistance from Junction to Ambient UNITS C/W RATINGS 600 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 0.5 f = 1MHz Total Power Dissipation Pout (mW) 250 200 150 100 50 0.4 0.3 0.2 0.1 0 25 50 75 100 125 150 0 1 2 3 4 5 6 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 A 400 A IB: 50 A step 50 40 30 20 100 A 10 IB: 50 A 500 A 0 1 2 3 4 5 6 7 8 300 A DC CURRENT GAIN vs. COLLECTOR CURRENT 000 VCE = 3 V Collector Current IC (mA) DC Current Gain (hFE) 200 A 100 010 0.1 1 10 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) NE677M04 TYPICAL PERFORMANCE CURVES (TA = 25 C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 MSG MAG 25 20 15 10 5 0 0.1 |S21e|2 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz VCE = 3 V Ic = 20 mA 10 5 0 1 10 100 1 10 Collector Current IC (mA) Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3 V f = 1 GHz 20 MSG MAG Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 25 VCE = 3 V f = 2 GHz 20 |S21e|2 15 MSG 15 MAG 10 10 |S21e|2 5 5 0 1 10 100 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 VCE = 3 V f = 2 GHz 16 Ga 12 Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) 25 VCE = 3 V f = 2.5 GHz 20 15 MAG Noise Figure NF (dB) 6 4 8 10 |S21e|2 2 NF 0 1 4 5 0 1 10 100 10 0 100 Collector Current IC (mA) Collector Current IC (mA) Associated Gain Ga (dB) NE677M04 TYPICAL PERFORMANCE CURVES (TA = 25 C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 GP VCE = 3.2 V f = 0.9 GHz Icq = 8 mA (RF OFF) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 250 25 VCE = 2.8 V f = 1.8 GHz Icq = 8 mA (RF OFF) 250 Collector Current IC (mA), Collector Efficiency c (%) Output Power Pout (dbm) Power Gain Gp (dB) Output Power Pout (dbm) Power Gain Gp (dB) 20 200 20 GP 15 200 15 150 150 10 Pout c 5 Ic 0 -20 100 10 Pout c 100 50 5 Ic 50 0 -15 -10 -5 0 5 0 -15 -10 -5 0 5 0 10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V f = 1.8 GHz Icq = 8 mA (RF OFF) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V f = 2.4 GHz Icq = 8 mA (RF OFF) 250 250 Collector Current IC (mA), Collector Efficiency c (%) Output Power Pout (dbm) Power Gain Gp (dB) GP 15 150 Output Power Pout (dbm) Power Gain Gp (dB) 20 200 20 200 15 GP 150 10 Pout c 100 10 Pout 5 Ic c 100 5 Ic 0 -15 -10 -5 0 5 50 50 0 10 0 -15 -10 -5 0 5 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency c (%) Collector Current IC (mA), Collector Efficiency c (%) NE677M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j10 0 10 25 S11 S22 50 100 +180 5 10 15 20 +90 j100 +135 +45 +0 -j10 -135 -45 -90 -j25 -j50 -j100 NE677M04 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.72 0.67 0.62 0.57 0.54 0.50 0.48 0.47 0.46 0.46 0.44 0.43 0.43 0.43 0.42 0.42 0.43 0.45 0.48 0.50 0.53 0.55 S11 ANG -28.02 -53.32 -74.47 -91.69 -105.42 -119.13 -128.64 -136.17 -143.27 -148.66 -170.56 179.75 176.51 173.63 159.00 144.48 129.44 115.14 102.37 91.32 81.53 72.28 MAG 23.85 21.19 18.36 15.78 13.68 11.77 10.42 9.33 8.43 7.70 5.30 4.47 4.24 4.04 3.26 2.73 2.34 2.04 1.79 1.59 1.42 1.27 S21 ANG 159.39 142.90 129.52 119.03 110.66 103.58 97.78 92.96 88.43 84.44 67.31 58.55 55.72 52.97 39.73 27.19 15.06 3.42 -7.89 -18.83 -29.44 -39.61 MAG 0.01 0.02 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.10 0.11 0.13 0.14 0.16 0.18 0.20 S12 ANG 76.80 61.76 53.97 47.84 44.49 41.61 40.18 39.74 39.29 39.40 40.48 41.76 41.66 42.00 42.28 40.73 38.24 34.92 30.39 25.33 19.49 13.49 MAG 0.94 0.85 0.75 0.66 0.60 0.51 0.48 0.45 0.43 0.42 0.39 0.39 0.39 0.40 0.42 0.46 0.49 0.53 0.56 0.59 0.62 0.66 S22 ANG -17.17 -30.90 -41.48 -49.21 -55.01 -57.12 -61.53 -63.91 -66.99 -69.40 -82.07 -89.26 -91.76 -94.18 -105.45 -115.95 -125.23 -134.51 -144.23 -154.88 -165.89 -176.84 0.11 0.22 0.30 0.38 0.46 0.62 0.69 0.75 0.82 0.87 1.10 1.19 1.20 1.22 1.26 1.24 1.18 1.11 1.04 0.97 0.90 0.85 K MAG1 (dB) 32.34 29.46 27.71 26.40 25.44 24.54 23.81 23.13 22.51 21.95 17.66 15.82 15.33 14.87 13.00 11.64 10.67 9.99 9.71 9.94 9.00 8.11 Note: 1. Gain Calculations: MAG = |S21| |S12| (K - K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE677M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j10 0 10 S11 25 S22 50 100 10 20 30 +180 +90 j100 +135 +45 +0 -j10 -135 -45 -90 -j25 -j50 -j100 NE677M04 VC = 3 V, IC = 20 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.58 0.53 0.49 0.46 0.44 0.42 0.42 0.41 0.41 0.41 0.40 0.39 0.39 0.39 0.39 0.39 0.41 0.43 0.45 0.48 0.51 0.53 S11 ANG -36.91 -67.97 -91.49 -108.88 -121.87 -135.00 -143.29 -149.68 -155.84 -160.23 -178.96 172.52 169.64 167.05 153.59 139.95 125.64 111.98 99.88 89.38 80.01 71.10 MAG 34.82 29.03 23.80 19.70 16.66 14.16 12.41 11.03 9.91 9.01 6.14 5.16 4.90 4.66 3.75 3.14 2.68 2.34 2.06 1.83 1.64 1.47 S21 ANG 154.30 135.74 122.19 112.29 104.71 98.54 93.35 89.03 84.93 81.35 65.55 57.30 54.62 52.02 39.33 27.21 15.39 3.97 -7.19 -18.07 -28.76 -39.12 MAG 0.01 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.05 0.06 0.06 0.06 0.08 0.10 0.11 0.13 0.15 0.16 0.18 0.20 S12 ANG 65.53 59.98 55.05 51.06 49.50 48.74 49.30 50.12 50.69 51.41 53.28 53.31 53.31 53.16 51.37 48.43 44.68 40.02 34.90 29.26 22.90 16.56 MAG 0.91 0.78 0.67 0.58 0.52 0.45 0.42 0.40 0.39 0.38 0.37 0.38 0.38 0.38 0.42 0.45 0.49 0.53 0.56 0.60 0.63 0.66 S22 ANG -19.74 -33.77 -43.13 -49.18 -53.43 -53.84 -57.21 -58.72 -61.16 -63.04 -74.89 -82.12 -84.61 -87.15 -98.84 -109.77 -119.46 -129.07 -139.11 -150.00 -161.27 -172.54 0.28 0.34 0.45 0.56 0.65 0.81 0.89 0.95 0.99 1.04 1.17 1.20 1.20 1.21 1.19 1.15 1.09 1.02 0.95 0.88 0.82 0.77 K MAG1 (dB) 35.64 32.23 30.35 28.90 27.72 26.72 25.86 25.08 24.32 22.48 18.28 16.70 16.25 15.82 14.09 12.83 12.00 11.72 11.48 10.49 9.55 8.69 Note: 1. Gain Calculations: MAG = |S21| |S12| (K - K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE677M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j10 0 10 25 S11 S22 50 100 10 20 30 40 +180 +90 j100 +135 +45 +0 -j10 -135 -90 -45 NE677M04 VC = 5 V, IC = 30 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.53 0.48 0.44 0.42 0.41 0.39 0.39 0.38 0.38 0.38 0.37 0.37 0.37 0.37 0.37 0.37 0.38 0.40 0.43 0.46 0.49 0.51 S11 ANG -41.03 -73.66 -97.50 -114.52 -127.00 -139.82 -147.57 -153.47 -159.31 -163.26 179.14 171.01 168.30 165.83 152.63 139.29 125.14 111.70 99.67 89.42 80.22 71.38 MAG 40.66 32.81 26.31 21.49 18.03 15.28 13.34 11.83 10.62 9.64 6.55 5.50 5.22 4.96 3.99 3.33 2.85 2.49 2.19 1.95 1.74 1.56 S21 ANG 151.83 132.70 119.35 109.81 102.57 96.73 91.78 87.64 83.69 80.25 64.91 56.83 54.20 51.65 39.13 27.15 15.43 4.05 -7.08 -17.99 -28.73 -39.19 MAG 0.01 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.05 0.06 0.06 0.06 0.08 0.09 0.11 0.13 0.15 0.16 0.18 0.20 S12 ANG 79.56 64.08 56.29 53.44 53.31 53.08 54.05 55.02 55.65 56.16 58.22 57.93 57.51 57.41 54.90 51.63 47.27 42.60 37.08 31.31 25.13 18.62 MAG 0.89 0.75 0.63 0.56 0.50 0.43 0.41 0.40 0.39 0.38 0.37 0.38 0.39 0.39 0.43 0.46 0.50 0.54 0.58 0.61 0.65 0.68 S22 ANG -20.30 -33.75 -42.07 -47.07 -50.52 -50.09 -52.99 -54.21 -56.48 -58.27 -70.16 -77.47 -80.11 -82.71 -94.79 -106.02 -116.01 -125.90 -136.09 -147.22 -158.70 -170.08 K 0.21 0.39 0.53 0.66 0.75 0.90 0.98 1.02 1.06 1.09 1.18 1.19 1.20 1.20 1.17 1.12 1.05 0.99 0.91 0.84 0.78 0.73 MAG1 (dB) 36.62 33.32 31.43 30.03 28.75 27.65 26.75 24.98 23.55 22.49 18.69 17.16 16.71 16.30 14.62 13.43 12.75 12.91 11.79 10.78 9.86 8.98 Note: 1. Gain Calculations: MAG = |S21| |S12| (K - K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 11/22/2002 |
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